february 2007 FDFMA2P857 integrated p-channel powertrench ? mosfet and schottky diode ?2007 fairchild semiconductor corporation FDFMA2P857 rev.b www.fairchildsemi.com 1 FDFMA2P857 integrated p-chan nel powertrench ? mosfet and schottky diode ? 20v, ? 3.0a, 120m features mosfet : ? max r ds(on) = 120m at v gs = ?4.5v, i d = ?3.0a ? max r ds(on) = 160m at v gs = ?2.5v, i d = ?2.5a ? max r ds(on) = 240m at v gs = ?1.8v, i d = ?1.0a schottky: ? v f < 0.54v @ 1a ? low profile - 0.8 mm maximum - in the new pack - age microfet 2x2 mm ? rohs compliant general description this device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra- portable applications. it features a mosfet with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. the microfet 2x2 package offers exceptional thermal performance for it?s physical size and is well suited to linear mode applications. mosfet maximum ratings t a = 25c unless otherwise noted thermal charac teristics package marking and ordering information symbol parameter ratings units v dss drain to source voltage 20 v v gss gate to source voltage 8 v i d drain current -continuous (note 1a) ?3 a -pulsed ?6 p d power dissipation (note 1a) 1.4 w power dissipation (note 1b) 0.7 t j , t stg operating and storage junction temperature range ?55 to +150 c v rrm schottky repetitive peak reverse voltage 30 v i o schottky average forward current 1 a r ja thermal resistance, junction to ambient (note 1a) 86 c/w r ja thermal resistance, junction to ambient (note 1b) 173 r ja thermal resistance, junction to ambient (note 1c) 86 r ja thermal resistance, junction to ambient (note 1d) 140 device marking device package reel size tape width quantity .857 FDFMA2P857 microfet 2x2 7?? 8mm 3000 units microfet 2x2 pin 1 a nc d c g s 1 3 2 4 5 6 a nc d c g s
FDFMA2P857 integrated p-channel powertrench ? mosfet and schottky diode FDFMA2P857 rev.b www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = ?250 p a, v gs = 0v ?20 v ' bv dss ' t j breakdown voltage temperature coefficient i d = ?250 p a, referenced to 25 c ?12 mv/ c i dss zero gate voltage drain current v ds = ?16v, v gs = 0v ?1 p a i gss gate to source leakage current v gs = 8v, v ds = 0v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = ?250 p a ?0.4 ?0.7 ?1.3 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = ?250 p a, referenced to 25 c 2 mv/ c r ds(on) static drain to source on resistance v gs = ?4.5v, i d = ?3.0a 90 120 m : v gs = ?2.5v, i d = ?2.5a 120 160 v gs = ?1.8v, i d = ?1.0a 172 240 v gs = ?4.5v, i d = ?3.0a, t j = 125 c 118 160 g fs forward transconductance v ds = ?5v, i d = ?3.0a 7 s dynamic characteristics c iss input capacitance v ds = ?10v, v gs = 0v, f = 1.0mhz 435 pf c oss output capacitance 80 pf c rss reverse transfer capacitance 45 pf switching characteristics t d(on) turn-on delay time v dd = ?10v, i d = ?1a v gs = ?4.5v, r gen = 6 : 9 18 ns t r rise time 11 19 ns t d(off) turn-off delay time 15 27 ns t f fall time 6 12 ns q g(tot) total gate charge v ds = ?10v i d = ?3.0a v gs = ?4.5v 4 6 nc q gs gate to source gate charge 0.8 nc q gd gate to drain ?miller? charge 0.9 nc drain-source diod e characteristics i s maximum continuous drain-source diode forward current ?1.1 a v sd source to drain diode forward voltage v gs = 0v, i s = ?1.1a (note 2) ?0.8 ?1.2 v t rr reverse recovery time i f = ?3.0a, di/dt = 100a/ p s 17 ns q rr reverse recovery charge 6 nc schottky diode characteristics i r reverse leakage v r = 10v t j = 25 c 0.5 4.5 p a t j = 85 c 0.05 1.0 ma t j = 125 c 0.6 8.4 ma i r reverse leakage v r = 20v t j = 25 c 1.1 8.0 p a t j = 85 c 0.09 1.6 ma t j = 125 c 0.9 10 ma v f forward voltage i f = 100ma t j = 25 c 0.37 0.40 v t j = 85 c 0.29 0.35 v t j = 125 c 0.23 0.29 v v f forward voltage i f = 1a t j = 25 c 0.5 0.54 v t j = 85 c 0.46 0.51 v t j = 125 c 0.43 0.48 v
FDFMA2P857 integrated p-channel powertrench ? mosfet and schottky diode FDFMA2P857 rev.b www.fairchildsemi.com 3 electrical characteristics t a = 25c unless otherwise noted notes: 1: r ja is determined with the device mounted on a 1in 2 oz. copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ja is determined by the user's board design. (a) mosfet r ja = 86 o c/w when mounted on a 1in 2 pad of 2 oz copper, 1.5? x 1.5? x 0.062? thick pcb. (b) mosfet r ja = 173 o c/w when mounted on a minimum pad of 2 oz copper. (c) schottky r ja = 86 o c/w when mounted on a 1in 2 pad of 2 oz copper, 1.5? x 1.5? x 0.062? thick pcb. (d) schottky r ja = 140 o c/w when mounted on a minimum pad of 2 oz copper. 2: pulse test: pulse width < 30 0 s, duty cycle < 2.0%. a)86 o c/w when mounted on a 1in 2 pad of 2 oz copper. b)173 o c/w when mounted on a minimum pad of 2 oz copper. c)86 o c/w when mounted on a 1in 2 pad of 2 oz copper. d)140 o c/w when mounted on a minimum pad of 2 oz copper.
FDFMA2P857 integrated p-channel powertrench ? mosfet and schottky diode FDFMA2P857 rev.b www.fairchildsemi.com 4 typical characteristics t a = 25c unless otherwise noted figure 1. 0.00.51.01.52.02.5 0 1 2 3 4 5 6 v gs =-4.5v -3.5v -3v -2.5v -2v -1.8v -1.5v -i d , drain current (a) -v ds , drain to source voltage (v) on-region characteristics figure 2. 0123456 0.5 1.0 1.5 2.0 2.5 3.0 -4.5v -3.5v -3.0v -2.5v -2.0v -1.8v v gs =-1.5v normalized drain to source on-resistance -i d , drain current(a) n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 1.3 1.4 i d =-3a v gs = -4.5v r ds(on) , normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 0246810 0.04 0.10 0.16 0.22 0.28 t a = 125 o c t a = 25 o c i d =-1.5a r ds(on) , drain to source on-resistance ( ohm ) -v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 6 v ds = -5v -55 o c 25 o c t a = 125 o c - i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0001 0.001 0.01 0.1 1 10 -55 o c 25 o c t a = 125 o c v gs = 0v - i s , reverse drain current (a) - v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDFMA2P857 integrated p-channel powertrench ? mosfet and schottky diode FDFMA2P857 rev.b www.fairchildsemi.com 5 figure 7. g 012345 0 1 2 3 4 5 -15v -10v - v gs , gate to source voltage(v) q g , gate charge(nc) v ds = -5v i d = -3a ate charge characteristics figure 8. 048121620 0 100 200 300 400 500 600 700 f = 1mhz v gs = 0v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss capacitance characteristics figure 9. 0.1 1 10 100 0.01 0.1 1 10 100us 1ms 100ms r ds(on) limited 100 1s dc 10s 10ms v gs = -4.5v single pulse r t ja = 173 o c/w t a = 25 o c i d , drain current (a) v ds , drain to source voltage (v) f o r w a r d b i a s s a f e operating area figure 10. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.1 1 10 100 r t ja = 173 o c/w 200 single pulse p ( pk ) , peak transient power (w) t, pulse width (s) s i n g l e p u l s e m a x i m u m power dissipation figure 11. 0 100 200 300 400 500 600 0.001 0.01 0.1 1 3 85 o c 25 o c t j = 125 o c i f, forward current(a) v f, forward voltage(mv) schottky diode forward current figure 12. 0 5 10 15 20 25 30 0.0001 0.001 0.01 0.1 1 10 t j = 85 o c t j = 25 o c t j = 125 o c i r , reverse leakage current (ma) v r , reverse voltage (v) schottky diode reverse current typical characteristics t a = 25c unless otherwise noted
FDFMA2P857 integrated p-channel powertrench ? mosfet and schottky diode FDFMA2P857 rev.b www.fairchildsemi.com 6 figure 13. transient thermal response curve 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 1 r t ja = 173 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t a = 25c unless otherwise noted
FDFMA2P857 integrated p-channel powertrench ? mosfet and schottky diode FDFMA2P857 rev.b www.fairchildsemi.com 7
FDFMA2P857 rev. b www.fairchildsemi.com 8 FDFMA2P857 integrated p-channel powertrench ? mosfet and schottky diode rev. i22 trademarks the following are registered and unregister ed trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliabilit y, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these spec ifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically th e warranty therein, whi ch covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or sys tems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact ? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? serdes ? scalarpump ? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc ? unifet? vcx? wire? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first produc tion this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only.
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